Samsung unveils a 512GB DDR5 memory module at the Hot Chips semiconductor conference. This new Samsung memory module runs at DDR5 7200 memory and basically designed for server enterprise use. The 512GB DDR5 module is double what is currently available in the market. It offers transfer speeds up to 7.2Gbps. Moreover, Samsung claims that the new DDR5 memory module offers 40% faster performance while operating at 1.1V. The company explains that this is possible due to the efficient Power management IC and a voltage regulator. The module also uses a High-K metal gate process which is a first for Electronic Data Processing DRAM.

Samsung Offerings with this 512GB DDR5 introduction

The South Korean tech giant states that they built the module with eight stacked DDR5 dies that interconnects with TSV technology. Previously, the company used only 4 dies in DDR4. Despite double dies, the new DDR5 module measures 1mm.

The company claims that this new module will offer an improved bit rate, courtesy of the on-die error-correction code. Moreover, this will make it more reliable and secure data processing. In addition, it will come with a new DFE that provides better signal reliability. As this new DDR5 module will aim at data centers and server markets, the memory is likely to limit to 64GB. The reports say that this module will go under mass production by the end of 2021. And, Samsung also expects to shift its new module to the mainstream market before 2023. Along with that, Intel’s 12th-gen Alder Lake chips, which support DDR5 are likely to launch later this year.